During testing, we measured the drive voltage of the FETs (Vgs) to be 4.013V. We will use this figure to calculate resistance and temperature rise.
FET datasheet for reference:
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The first step is to define a few operating conditions as boundaries for our analysis.
Parameter | Max Value | Notes |
|---|---|---|
Ambient Temp | 60C | Automotive |
Current | 17A | DC-DC maximum value |
Continuous | 10A | Estimated maximum |
Thermal Resistance | 50 C/W | For 1” copper PCB for each FET (2” total for back to back FETs). Paralleled fets will be assumed to fit on the same board area |
Rds on | 6.3 mOhm x 1.3 = 8.2 mOhm | Vgs = 4V, Tj = 90. Datasheet figures 11 & 12. |
Calculated Values
Max power dissipation | (90-60) / 50 | 0.6W (per FET) |
Max Rds On (1 fet) | 6 mOhm | Using 10A Continuous |
Max Rds On (2 fets) | 12mOhm | 10A, assuming 50/50% current sharing |
Max Rds On (2 fets) | 8.6 mOhm | 10A, assuming 70/30% worst case current sharing |
Max Rds On (3 fets) | 15 mOhm | 10A, assuming 40/30/30% current sharing |
So we should be fine with 2 FETs on each input (power supply, DC-DC, AUX).
So including relevant safety factors (extremely high ambient temp, high continuous current, highly uneven current sharing) 2 parallel groups of back to back FETs should be completely fine.